document number: 83660 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 11-jan-08 1 optocoupler, phototransistor output, no base connection moc8101/moc8102/moc8103/moc8104/moc8105 vishay semiconductors description the moc8101/2/3/4/5 family optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in dip-6 package. the coupling device is suitable for signal transmission between two electrically separated circuits. the potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. the base terminal of the moc8101/2/3/4/5 is not connected, resulting in a substant ially improved common mode interference immunity. features ? isolation test voltage, 5300 v rms ? no base terminal connection for improved common mode interface immunity ? long term stability ? industry standard dual in line package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? csa 93751 ? bsi iec 60950; iec 60065 ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 pending available with option 1 note for additional information on the availabl e options refer to option information. i179009 1 2 3 6 5 4 b c e a c nc order information part remarks moc8101 ctr 50 to 80 %, dip-6 moc8102 ctr 73 to 117 %, dip-6 moc8103 ctr 108 to 173 %, dip-6 moc8104 ctr 160 to 256 %, dip-6 moc8105 ctr 65 to 133 %, dip-6 moc8101-x006 ctr 50 to 80 %, dip-6 400 mil (option 6) moc8101-x007 ctr 50 to 80 %, smd-6 (option 7) moc8101-x009 ctr 50 to 80 %, smd-6 (option 9) moc8102-x006 ctr 73 to 117 %, dip-6 400 mil (option 6) moc8102-x007 ctr 73 to 117 %, smd-6 (option 7) moc8102-x009 ctr 73 to 117 %, smd-6 (option 9) moc8104-x006 ctr 160 to 256 %, dip-6 400 mil (option 6) moc8104-x009 ctr 160 to 256 %, smd-6 (option 9) moc8105-x006 ctr 65 to 133 %, dip-6 400 mil (option 6) moc8105-x009 ctr 65 to 133 %, smd-6 (option 9)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83660 2 rev. 1.5, 11-jan-08 moc8101/moc8102/moc 8103/moc8104/moc8105 vishay semiconductors optocoupler, phototransistor output, no base connection notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (smd). refe r to wave profile for soldering conditi ons for through hole devices (dip). absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6.0 v forward continuous current i f 60 ma surge forward current t 10 s i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25c 1.33 mw/c output collector emitter breakdown voltage bv ceo 30 v emitter collector breakdown voltage bv eco 7.0 v collector current i c 50 ma derate linearly from 25c 2.0 mw/c power dissipation p diss 150 mw coupler isolation test voltage v iso 5300 v rms creepage distance 7.0 mm clearance distance 7.0 mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 cti 175 isolation resistance v io = 500 v r io 10 12 derate linearly from 25 c 3.33 mw/c total power dissipation p tot 250 mw storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature (2) max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.25 1.5 v breakdown voltage i r = 10 a v br 6.0 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf thermal resistance r thja 750 k/w output collector emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 5.2 pf collector emitter dark current v ce = 10 v, t amp = 25 c moc8101 i ceo1 1.0 50 na v ce = 10 v, t amp = 100 c moc8102 i ceo1 1.0 a collector emitter breakdown voltage i c = 1.0 ma bv ceo 30 v emitter collector breakdown voltage i e = 100 abv eco 7.0 v thermal resistance r thja 500 k/w
document number: 83660 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 11-jan-08 3 moc8101/moc8102/mo c8103/moc8104/moc8105 optocoupler, phototransistor output, no base connection vishay semiconductors note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. typical characteristics t amb = 25 c unless otherwise specified fig. 1 - forward voltage vs. forward current fig. 2 - collector current vs. led forward current coupler saturation voltage collector emitter i f = 5.0 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio v ce = 10 v, i f = 10 ma moc8101 ctr 50 80 % moc8102 ctr 73 117 % moc8103 ctr 108 173 % moc8104 ctr 160 256 % moc8105 ctr 65 133 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time v cc = 10 v, i c = 2.0 ma, r l = 100 t on 3.0 s turn-off time v cc = 10 v, i c = 2.0 ma, r l = 100 t off 2.3 s rise time v cc = 10 v, i c = 2.0 ma, r l = 100 t r 2.0 s fall time v cc = 10 v, i c = 2.0 ma, r l = 100 t f 2.0 s cut off frequency f co 250 khz electrical characteristics parameter test condition part symbol min. typ. max. unit imoc 8 101_02 1.7 1.5 1.3 1.1 0.9 0.7 i (ma) f v f ( v ) 0.1 1 10 100 t a = 55 c t a = 25 c t a = 100 c imoc 8 101_03 10 1 0.1 0.01 i c ( n ormalized) 0.1 1 10 10 0 i f (ma) n ormalized to i f = 10 ma
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83660 4 rev. 1.5, 11-jan-08 moc8101/moc8102/moc 8103/moc8104/moc8105 vishay semiconductors optocoupler, phototransistor output, no base connection fig. 3 - collector current vs. collector emitter voltage fig. 4 - collector current vs. ambient temperature fig. 5 - collector emitter dark current vs. ambient temperature fig. 6 - capacitance vs. voltage fig. 7 - switching time test circuit and waveforms imoc 8 101_04 moc 8 104 moc 8 103 moc 8 102 moc 8 101 moc 8 105 i f = 10 ma 25 20 15 10 5 0 i c (ma) 0 1 2 3 4 5 6 7 8 9 10 v ce ( v ) imoc 8 101_05 t(c) i c (ma) 10 1 0.1 - 60 - 40 - 2 0 0 20 40 60 8 0 100 120 n ormalized to t a = 25 c i f = 10 ma v ce = 10 v imoc 8 101_06 10000 1000 100 10 1 0.1 0 20 40 60 8 0 100 t a (c) i ceo ( n ormalized) n ormalized to v ce = 10 v v ce = 30 v v ce = 10 v imoc 8 101_07 20 1 8 16 14 12 10 8 6 4 2 0 0.01 0.1 1 1 0 100 c - capacitance (pf) v oltage ( v ) f = 1 mhz c led c ce imoc 8 1010_01 v cc = 10 v i c i f r l = 100 o u tp u t inp u t 10 % 90 % inp u tp u lse o u tp u tp u lse t on t of f t r t f test circ u it w a v eforms
document number: 83660 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 11-jan-08 5 moc8101/moc8102/mo c8103/moc8104/moc8105 optocoupler, phototransistor output, no base connection vishay semiconductors package dimensions in inches (millimeters) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) min. option 7 1 8 450
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83660 6 rev. 1.5, 11-jan-08 moc8101/moc8102/moc 8103/moc8104/moc8105 vishay semiconductors optocoupler, phototransistor output, no base connection ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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